EY

Eun-Jung Yun

Samsung: 47 patents #2,048 of 75,807Top 3%
📍 Seoul, KR: #895 of 39,741 inventorsTop 3%
Overall (All Time): #58,313 of 4,157,543Top 2%
48
Patents All Time

Issued Patents All Time

Showing 26–48 of 48 patents

Patent #TitleCo-InventorsDate
7696032 Semiconductor device including a crystal semiconductor layer, its fabrication and its operation Sung Min Kim 2010-04-13
7675142 Electromechanical non-volatile memory devices Sung-Young Lee, Min Sang Kim, Sung Min Kim 2010-03-09
7662720 3-Dimensional flash memory device and method of fabricating the same Sung Min Kim, Dong Won Kim, Jae-Man Yoon 2010-02-16
7541645 Metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions Sung Min Kim, Dong-Gun Park, Sung-Young Lee, Hye-Jin Cho, Shin-Ae Lee +2 more 2009-06-02
7511998 Non-volatile memory device and method of fabricating the same Sung-Young Lee, Dong Won Kim, Min Sang Kim, Dong-Gun Park 2009-03-31
7482649 Multi-bit nonvolatile memory devices Sung Min Kim 2009-01-27
7473963 Metal oxide semiconductor (MOS) transistors having three dimensional channels Sung Min Kim, Dong Won Kim, Dong-Gun Park, Sung-Young Lee, Jeong-Dong Choe +2 more 2009-01-06
7453716 Semiconductor memory device with stacked control transistors Sung Min Kim, Jong-Soo Seo, Du-Eung Kim, Beak-Hyung Cho, Byung-Seo Kim 2008-11-18
7442987 Non-volatile memory devices including divided charge storage structures Sung Min Kim, Dong Won Kim 2008-10-28
7402483 Methods of forming a multi-bridge-channel MOSFET Sung Min Kim, Sung-Young Lee 2008-07-22
7382018 3-Dimensional flash memory device and method of fabricating the same Sung Min Kim, Dong Won Kim, Jae-Man Yoon 2008-06-03
7348246 Methods of fabricating non-volatile memory devices including divided charge storage structures Sung Min Kim, Dong Won Kim 2008-03-25
7316968 Methods of forming semiconductor devices having multiple channel MOS transistors Sung-Young Lee, Sung Min Kim, Dong-Gun Park, Chang-Woo Oh 2008-01-08
7285456 Method of fabricating a fin field effect transistor having a plurality of protruding channels Sung Min Kim 2007-10-23
7285466 Methods of forming metal oxide semiconductor (MOS) transistors having three dimensional channels Sung Min Kim, Dong Won Kim, Dong-Gun Park, Sung-Young Lee, Jeong-Dong Choe +2 more 2007-10-23
7265418 Semiconductor devices having field effect transistors Hye-Jin Cho, Dong Won Kim, Sung Min Kim 2007-09-04
7253060 Gate-all-around type of semiconductor device and method of fabricating the same Sung Min Kim, Sung-Young Lee 2007-08-07
7187022 Semiconductor device having a multi-bridge-channel and method for fabricating the same Sung Min Kim, Sung-Young Lee 2007-03-06
7129541 Field effect transistors including vertically oriented gate electrodes extending inside vertically protruding portions of a substrate Sung Min Kim, Hye-Jin Cho, Shin-Ae Lee, Dong-Gun Park 2006-10-31
7122431 Methods of fabrication metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions Sung Min Kim, Dong-Gun Park, Sung-Young Lee, Hye-Jin Cho, Shin-Ae Lee +2 more 2006-10-17
7037768 Methods of etching intermediate silicon germanium layers using ion implantation to promote selectivity Sung-Young Lee, Chang-Sub Lee, Sung Min Kim, Dong-Gun Park 2006-05-02
6914316 Semiconductor trench isolation structure Sung-Eui Kim 2005-07-05
6881637 Method of forming a gate electrode, method of manufacturing a semiconductor device having the gate electrode, and method of oxidizing a substrate Jae-Jong Han, Yong-Woo Hyung, Seung-Mok Shin, Kong-Soo Lee 2005-04-19