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Resistive memory devices having address-dependent parasitic resistance compensation during programming |
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Memory device comprising resistance change material and method for driving the same |
Hyun-Kook Park, Young Hoon Oh, Chi-Weon Yoon, Yong Jun Lee |
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Tae Hui Na, Jung Sunwoo, Yong Jun Lee |
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Memory devices, memory systems and methods of operating memory devices |
Yong Jun Lee, Tae Hui Na |
2020-04-21 |
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Memory device for generating a compensation current based on a difference between a first read voltage and a second read voltage and a method of operating the same |
Tae Hui Na, Jung Sunwoo, Yong Jun Lee |
2020-03-03 |
| 10181348 |
Memory device comprising resistance change material and method for driving the same |
Hyun-Kook Park, Young Hoon Oh, Chi-Weon Yoon, Yong Jun Lee |
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Memory device having resistance change material and operating method for the memory device |
Hyun-Kook Park, Jung Sunwoo, Young Hoon Oh, Yong Jun Lee |
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