Issued Patents All Time
Showing 51–68 of 68 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7385237 | Fin field effect transistors with low resistance contact structures | Deok-Hyung Lee, In Deog BAE, Jong-Wook Lee | 2008-06-10 |
| 7338867 | Semiconductor device having contact pads and method for manufacturing the same | Deok-Hyung Lee, Si-Young Choi, Chul-Sung Kim, In-Soo Jung, Jong-Ryeol Yoo | 2008-03-04 |
| 7320908 | Methods of forming semiconductor devices having buried oxide patterns | Yong-Hoon Son, Si-Young Choi, Jong-Wook Lee, In-Soo Jung, Deok-Hyung Lee | 2008-01-22 |
| 7268396 | Finfets having first and second gates of different resistivities | Deok-Hyung Lee, Si-Young Choi, In-Soo Jung | 2007-09-11 |
| 7205609 | Methods of forming semiconductor devices including fin structures and related devices | Deok-Hyung Lee, Si-Young Choi, Yong-Hoon Son, In-Soo Jung | 2007-04-17 |
| 7176067 | Methods of fabricating fin field effect transistors | In-Soo Jung, Deok-Hyung Lee, Si-Young Choi, Yong-Hoon Son | 2007-02-13 |
| 7141456 | Methods of fabricating Fin-field effect transistors (Fin-FETs) having protection layers | Deok-Hyung Lee, Si-Young Choi, In-Soo Jung, Jin-Hwa Heo | 2006-11-28 |
| 7141856 | Multi-structured Si-fin | Deok-Hyung Lee, In-Soo Jung, Yong-Hoon Son, Siyoung Choi, Taek Kim | 2006-11-28 |
| 7122871 | Integrated circuit field effect transistors including channel-containing fin having regions of high and low doping concentrations | Deok-Hyung Lee, Si-Young Choi, Taek Kim, Yong-Hoon Son, In-Soo Jung | 2006-10-17 |
| 7081391 | Integrated circuit devices having buried insulation layers and methods of forming the same | Si-Young Choi, Jong-Ryeol Yoo, Yong-Hoon Son, In-Soo Jung, Deok-Hyung Lee | 2006-07-25 |
| 7074662 | Methods for fabricating fin field effect transistors using a protective layer to reduce etching damage | Deok-Hyung Lee, Si-Young Choi, Yong-Hoon Son, In-Soo Jung | 2006-07-11 |
| 7071048 | Methods of fabricating fin field effect transistors having capping insulation layers | Yong-Hoon Son, Si-Young Choi, Deok-Hyung Lee, In-Soo Jung | 2006-07-04 |
| 6963094 | Metal oxide semiconductor transistors having a drain punch through blocking region and methods for fabricating metal oxide semiconductor transistors having a drain punch through blocking region | Si-Young Choi, Chul-Sung Kim, Jong-Ryeol Yoo, Deok-Hyung Lee | 2005-11-08 |
| 6900102 | Methods of forming double gate electrodes using tunnel and trench | Si-Young Choi, Jong-Ryeol Yoo, Deok-Hyung Lee, In-Soo Jung | 2005-05-31 |
| 6890823 | Methods of forming integrated circuits with thermal oxide layers on side walls of gate electrodes wherein the source and drain are higher than the gate electrode | Si-Young Choi, Chul-Sung Kim, Jong-Ryeol Yoo, Deok-Hyung Lee | 2005-05-10 |
| 6849520 | Method and device for forming an STI type isolation in a semiconductor device | Chul-Sung Kim, Si-Young Choi, Jung-Woo Park, Jong-Ryol Ryu | 2005-02-01 |
| 6835996 | Method and device for forming an STI type isolation in a semiconductor device | Chul-Sung Kim, Si-Young Choi, Jung-Woo Park, Jong-Ryol Ryu | 2004-12-28 |
| 6660613 | Method and device for forming an STI type isolation in a semiconductor device | Chul-Sung Kim, Si-Young Choi, Jung-Woo Park, Jong-Ryol Ryu | 2003-12-09 |