Issued Patents All Time
Showing 251–275 of 282 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6097044 | Charge transfer device and method for manufacturing the same | — | 2000-08-01 |
| 6087647 | Solid state imaging device and driving method therefor | — | 2000-07-11 |
| 6081018 | Solid state image sensor | Keisuke Hatano | 2000-06-27 |
| 6060732 | Solid state image sensor and method for fabricating the same | Ichiro Murakami | 2000-05-09 |
| 6057570 | Solid-state image device | Keisuke Hatano | 2000-05-02 |
| 6049100 | Solid state image sensor unit with wide dynamic range and high resolution | Shinichi Kawai | 2000-04-11 |
| 6018170 | Single-layer-electrode type two-phase charge coupled device having smooth charge transfer | Keisuke Hatano | 2000-01-25 |
| 6011282 | Charge coupled device with a buried channel two-phase driven two-layer electrode structure | — | 2000-01-04 |
| 5990953 | Solid state imaging device having overflow drain region provided in parallel to CCD shift register | — | 1999-11-23 |
| 5943095 | Method for operating charge-coupled device at high speed | — | 1999-08-24 |
| 5943556 | Method for manufacturing an electric charge transfer device | Keisuke Hatano | 1999-08-24 |
| 5920346 | Two-dimensional CCD image sensor free from vertical black streaks | — | 1999-07-06 |
| 5914506 | Charge coupled device having two-layer electrodes and method of manufacturing the same | — | 1999-06-22 |
| 5861642 | Semiconductor device having charge transfer device equipped with three semiconductor layers of same conductivity type with mutually different concentrations | — | 1999-01-19 |
| 5830778 | Method of manufacturing a charge transfer device | Keisuke Hatano, Yuji Surisawa | 1998-11-03 |
| 5809102 | CCD having charge-injected potential barrier regions protected from overvoltages | — | 1998-09-15 |
| 5796801 | Charge coupled device with high charge transfer efficiency | — | 1998-08-18 |
| 5770870 | Solid-state imaging device having an unwanted charge drain section disposed adjacent to horizonal charge transfer section | — | 1998-06-23 |
| 5747788 | Solid state image sensor with reinforced fringe electric field at its charge transfer section | — | 1998-05-05 |
| 5589698 | Solid state imaging device having sliding potential gradient | — | 1996-12-31 |
| 5585653 | Solid-state photoelectric imaging device with reduced smearing | — | 1996-12-17 |
| 5567632 | Method for fabricating solid state image sensor device having buried type photodiode | Satoshi Uchiya | 1996-10-22 |
| 5565373 | Method of fabricating an isolation region in a semiconductor device without heat treatment of active regions | — | 1996-10-15 |
| 5521405 | Charge transfer device with two-phase two-layered electrode structure and method for fabricating the same | — | 1996-05-28 |
| 5461247 | Load resistance structure for source follower in charge transfer device | — | 1995-10-24 |