Issued Patents All Time
Showing 201–225 of 235 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8406064 | Latching circuit | Seong-Ook Jung, Kyungho Ryu, Jisu Kim, Jung Pill Kim | 2013-03-26 |
| 8363459 | Magnetic tunnel junction device and fabrication | Xiaochun Zhu, Xia Li | 2013-01-29 |
| 8362580 | Spin-transfer switching magnetic element utilizing a composite free layer comprising a superparamagnetic layer | Wei-Chuan Chen | 2013-01-29 |
| 8344433 | Magnetic tunnel junction (MTJ) and methods, and magnetic random access memory (MRAM) employing same | Xiaochun Zhu, Matthew Michael Nowak, Xia Li | 2013-01-01 |
| 8335101 | Resistance-based memory with reduced voltage input/output device | Seong-Ook Jung, Jisu Kim | 2012-12-18 |
| 8258812 | Software programmable logic using spin transfer torque magnetoresistive devices | Lew G. Chua-Eoan, Matthew Michael Nowak | 2012-09-04 |
| 8248840 | Magnetoresistive random access memory (MRAM) with integrated magnetic film enhanced circuit elements | Xia Li, Xiaochun Zhu, Kangho Lee | 2012-08-21 |
| 8238143 | Magnetic tunnel junction device and fabrication | Kangho Lee, Xiaochun Zhu, Xia Li | 2012-08-07 |
| 8227708 | Via structure integrated in electronic substrate | Xia Li, Wei Zhao, Yu Cao, Shiqun Gu, Ming-Chu King | 2012-07-24 |
| 8208290 | System and method to manufacture magnetic random access memory | Hari M. Rao, Xiaochun Zhu, Sean Li, Ken Kinsun Lee, Matthew Michael Nowak +1 more | 2012-06-26 |
| 8161430 | System and method of resistance based memory circuit parameter adjustment | Seong-Ook Jung, Jisu Kim, Jee-Hwan Song, Sei Seung Yoon | 2012-04-17 |
| 8159864 | Data integrity preservation in spin transfer torque magnetoresistive random access memory | Sei Seung Yoon | 2012-04-17 |
| 8154903 | Split path sensing circuit | Seong-Ook Jung, Jisu Kim | 2012-04-10 |
| 8144509 | Write operation for spin transfer torque magnetoresistive random access memory with reduced bit cell size | Seong-Ook Jung, Mehdi Hamidi Sani, Sei Seung Yoon | 2012-03-27 |
| 8134856 | Data protection scheme during power-up in spin transfer torque magnetoresistive random access memory | Sei Seung Yoon | 2012-03-13 |
| 8125040 | Two mask MTJ integration for STT MRAM | Xia Li, Shiqun Gu, Matthew Michael Nowak | 2012-02-28 |
| 8120126 | Magnetic tunnel junction device and fabrication | Kangho Lee, Xiaochun Zhu, Xia Li | 2012-02-21 |
| 8107280 | Word line voltage control in STT-MRAM | Sei Seung Yoon, Mehdi Hamidi Sani | 2012-01-31 |
| 8094486 | Pad design with buffers for STT-MRAM or other short pulse signal transmission | William Xia | 2012-01-10 |
| 8040154 | Software programmable logic using spin transfer torque magnetoresistive devices | Lew G. Chua-Eoan, Matthew Michael Nowak | 2011-10-18 |
| 8027206 | Bit line voltage control in spin transfer torque magnetoresistive random access memory | Sei Seung Yoon | 2011-09-27 |
| 8004881 | Magnetic tunnel junction device with separate read and write paths | Xiaochun Zhu, Shiqun Gu, Xia Li | 2011-08-23 |
| 8004880 | Read disturb reduction circuit for spin transfer torque magnetoresistive random access memory | Sei Seung Yoon, Medi Hamidi Sani | 2011-08-23 |
| 7995383 | Magnetic tunnel junction cell adapted to store multiple digital values | Xia Li, Xiaochun Zhu | 2011-08-09 |
| 7969767 | Spin transfer torque—magnetic tunnel junction device and method of operation | Xia Li, Kangho Lee, Xiaochun Zhu | 2011-06-28 |