Issued Patents All Time
Showing 1–25 of 25 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9206957 | Asymmetric total internal reflective (TIR) optic light assembly | Paul Ford, David R. Pfund | 2015-12-08 |
| 8465190 | Total internal reflective (TIR) optic light assembly | Paul Ford, David R. Pfund | 2013-06-18 |
| 7259400 | Nanocomposite photonic structures for solid state lighting | — | 2007-08-21 |
| 7119372 | Flip-chip light emitting diode | Edward Brittain Stokes, Mark P. D'Evelyn, Stanton Earl Weaver, Peter Micah Sandvik, Abasifreke Ebong +2 more | 2006-10-10 |
| 6998281 | Solid state lighting device with reduced form factor including LED with directional emission and package with microoptics | Vikram Krishnamurthy | 2006-02-14 |
| 6885004 | High resolution tiled microchannel storage phosphor based radiation sensor | Rameshwar Nath Shargava | 2005-04-26 |
| 6734465 | Nanocrystalline based phosphors and photonic structures for solid state lighting | Rameshwar N. Bhargava | 2004-05-11 |
| 6674837 | X-ray imaging system incorporating pixelated X-ray source and synchronized detector | Rameshwar N. Bhargava, Paul Patt | 2004-01-06 |
| 6534772 | High resolution high output microchannel based radiation sensor | Vishal Chhabra, Rameshwar N. Bhargava, Dennis Gallagher, Samuel P. Herko, Bharati S. Kulkarni +1 more | 2003-03-18 |
| 6452184 | Microchannel high resolution x-ray sensor having an integrated photomultiplier | John V. Veliadis, Vishal Chhabra, Bharail Kulkarni, Neeta Pandit, Rameshwar N. Bhargava +1 more | 2002-09-17 |
| 6300640 | Composite nanophosphor screen for detecting radiation having optically reflective coatings | Rameshwar N. Bhargava, Vishal Chhabra, John V. Veliadis | 2001-10-09 |
| 6262440 | Metal electrical contact for high current density applications in LED and laser devices | Kevin Haberern, Paulette Kellawon | 2001-07-17 |
| 6113691 | Ultra-low pressure metal-organic vapor phase epitaxy (MOVPE) method of producing II-IV semiconductor compounds and II-VI semiconductor compounds thus produced | Donald R. Dorman, Dennis Gallagher | 2000-09-05 |
| 6096663 | Method of forming a laterally-varying charge profile in silicon carbide substrate | Dev Alok, Theodore Letavic | 2000-08-01 |
| 5990531 | Methods of making high voltage GaN-AlN based semiconductor devices and semiconductor devices made | Piotr M. Mensz, Babar A. Khan | 1999-11-23 |
| 5915164 | Methods of making high voltage GaN-A1N based semiconductor devices | Piotr M. Mensz, Babar A. Khan | 1999-06-22 |
| 5796209 | Gas discharge lamps and lasers fabricated by michromachining | Babar A. Khan, David A. Cammack, Ronald D. Pinker | 1998-08-18 |
| 5786233 | Photo-assisted annealing process for activation of acceptors in semiconductor compound layers | Donald R. Dorman, Dennis Gallagher | 1998-07-28 |
| 5624293 | Gas discharge lamps and lasers fabricated by micromachining methodology | Babar A. Khan, David A. Cammack, Ronald D. Pinker | 1997-04-29 |
| 5547897 | Photo-assisted nitrogen doping of II-VI semiconductor compounds during epitaxial growth using an amine | Dennis Gallagher, Donald R. Dorman | 1996-08-20 |
| 5399524 | Method of providing an ohmic type contact on p-type Zn(S)Se | Babar A. Khan, Donald R. Dorman | 1995-03-21 |
| 5354708 | Method of nitrogen doping of II-VI semiconductor compounds during epitaxial growth using an amine | Babar A. Khan, Donald R. Dorman | 1994-10-11 |
| 5293074 | Ohmic contact to p-type ZnSe | Babar A. Khan, Donald R. Dorman | 1994-03-08 |
| 5273931 | Method of growing epitaxial layers of N-doped II-VI semiconductor compounds | Babar A. Khan, Donald R. Dorman | 1993-12-28 |
| 5227328 | Method of producing epitaxial layers of II-VI semiconductors with high acceptor concentrations | Babar A. Khan | 1993-07-13 |