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Home › Method of manufacturing a passivating composite comprising a silicon nitride (SI.sub.1 3N.sub.4) layer and a phosphosilicate glass (PSG) layer for a semiconductor device layer

Method of manufacturing a passivating composite comprising a silicon nitride (SI.sub.1 3N.sub.4) layer and a phosphosilicate glass (PSG) layer for a semiconductor device layer

US Patent RE32351 · Granted Feb 17, 1987

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