{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Method for fabricating a fin field effect transistor and a shallow trench isolation", "item": "https://www.patentleaderboard.com/patent/9991154"}]}
Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for fabricating a fin field effect transistor and a shallow trench isolation

Method for fabricating a fin field effect transistor and a shallow trench isolation

US Patent 9991154 · Granted Jun 5, 2018

Estimated economic value: $3,940,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Transistor gate structures and methods of forming the same2025
Semiconductor device and method2024
Void elimination for gap-filling in high-aspect ratio trenches2024
Gate structures in transistor devices and methods of forming same2024
Semiconductor structure and method for making the same2024
Low-k gate spacer and methods for forming the same2023
Fin field-effect transistor device and method2023
Transistor gate structures and methods of forming the same2023
Low-k feature formation processes and structures formed thereby2023
Void elimination for gap-filling in high-aspect ratio trenches2023
Fin field-effect transistor device and method2022
Semiconductor device and method2022