Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions

Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions

US Patent 9984894 · Granted May 29, 2018

Estimated economic value: $9,744,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Flexible phased array antenna systems and methods2025
Ultra wideband location determination with predicative and power saving capabili2025
Methods of forming ohmic contacts on semiconductor devices with trench/mesa stru2025
Semiconductor devices having gate resistors with low variation in resistance val2025
Vertical power devices having mesas and etched trenches therebetween2025
Support shield structures for trenched semiconductor devices2025
Method and apparatus for controlled relative motion of surgical instruments and 2025
Vertical power devices fabricated using implanted methods2025
Power semiconductor devices including a trenched gate and methods of forming suc2025
Trench bottom shielding methods and approaches for trenched semiconductor device2025
Protection structures for semiconductor devices with sensor arrangements2025
FinFET power semiconductor devices2024