Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Defect-Free SiGe source/drain formation by epitaxy-free process

Defect-Free SiGe source/drain formation by epitaxy-free process

US Patent 9899519 · Granted Feb 20, 2018

Estimated economic value: $3,685,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor devices with backside power rail and backside self-aligned via2025
Source/drain metal contact and formation thereof2025
FinFET structure with airgap and method of forming the same2025
Nanostructure with various widths2025
Spacers for semiconductor devices including backside power rails2025
Integrated circuit structure with backside interconnection structure having air 2025
Semiconductor device with metal cap on gate2025
Device having a gate electrode wrapping around semiconductor layers and proximat2025
Fin structures having varied fin heights for semiconductor device2025
Semiconductor device with trimmed channel region and method of making the same2025
Semiconductor device2025
Self-aligned metal gate for multigate device2025