Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Compensation of temperature effects in semiconductor device structures

Compensation of temperature effects in semiconductor device structures

US Patent 9837439 · Granted Dec 5, 2017

Estimated economic value: $14,904,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Electronic device and charge pump circuit2024
Lateral transistor with self-aligned body implant2024
Method of forming a semiconductor device structure and semiconductor device stru2020
MEMS capacitive pressure sensors in fully depleted semiconductor on insulator (F2019
Tunable capacitor for FDSOI applications2019
FinFET based flash memory cell2018
Method for compensating for temperature effects in semiconductor device structur2018
Integrated circuits with a partially-depleted region formed over a bulk silicon 2018
MOS capacitive structure of reduced capacitance variability2018
Method of forming a semiconductor device structure using differing spacer widths2018
Method of forming a semiconductor device structure and semiconductor device stru2017
Tunable capacitor for FDSOI applications2017