Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Super junction semiconductor device having columnar super junction regions extending into a drift layer

Super junction semiconductor device having columnar super junction regions extending into a drift layer

US Patent 9722020 · Granted Aug 1, 2017

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device with sense element2025
Method of manufacturing a semiconductor device2025
Semiconductor device including a field stop region2025
Method of manufacturing a metal silicide layer above a silicon carbide substrate2025
Superjunction transistor device2025
Power semiconductor device having an electrode with an embedded material2025
Method of manufacturing ohmic contacts on a silicon carbide (SIC) substrate, met2025
Semiconductor device including a field stop region2025
Transistor device2025
Transistor device and method of manufacturing2025
Semiconductor device with a porous portion, wafer composite and method of manufa2025
Transistor arrangement with a lateral superjunction transistor device2025