Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device and method of forming a power MOSFET with interconnect structure to achieve lower RDSON

Semiconductor device and method of forming a power MOSFET with interconnect structure to achieve lower RDSON

US Patent 9640638 · Granted May 2, 2017

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device and method of direct wafer bonding between semiconductor la2025
Fast block device, system and methodology2025
Radiation hardened high voltage superjunction MOSFET2025
Semiconductor device providing a biosensor to test for pathogen2025
System, method and apparatus for accelerating fast block devices2024
Semiconductor device with oxide-nitride stack2024
Radiation hardened high voltage superjunction MOSFET2023
System, method and apparatus for accelerating fast block devices2023
Semiconductor device and method of forming low voltage power MOSFETs using graph2023
Fast block device, system and methodology2022
Semiconductor device with oxide-nitride stack2022
Radiation hardened high voltage superjunction MOSFET2022