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Home › Semiconductor device and method of forming low voltage power MOSFETs using graphene for metal layers and graphene nanoribbons for channel and drain enhancement regions of power vertical and lateral MOSFETs

Semiconductor device and method of forming low voltage power MOSFETs using graphene for metal layers and graphene nanoribbons for channel and drain enhancement regions of power vertical and lateral MOSFETs

US Patent 11545565 · Granted Jan 3, 2023

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