Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor structure having enlarged regrowth regions and manufacturing method of the same

Semiconductor structure having enlarged regrowth regions and manufacturing method of the same

US Patent 9614085 · Granted Apr 4, 2017

Estimated economic value: $2,991,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

FinFET structures and methods of forming the same2025
FinFET EPI channels having different heights on a stepped substrate2025
Methods of forming gate structures with uniform gate length2025
Apparatus and method for neural network computation2025
Data feature augmentation system and method for low-precision neural network2025
FinFET device and methods of forming the same2025
FinFET device and method of forming same2025
FinFET device and method of forming same2025
Germanium tin gate-all-around device2024
Method of manufacturing a semiconductor device and a semiconductor device2024
Method for forming source/drain contacts2024
Semiconductor device having a shaped epitaxial region with shaping section2024