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Home › Applying channel stress to Fin field-effect transistors (FETs) (FinFETs) using a self-aligned single diffusion break (SDB) isolation structure

Applying channel stress to Fin field-effect transistors (FETs) (FinFETs) using a self-aligned single diffusion break (SDB) isolation structure

US Patent 9570442 · Granted Feb 14, 2017

Estimated economic value: $21,456,000 ⓘ

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