Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method to selectively polish silicon carbide films

Method to selectively polish silicon carbide films

US Patent 9548211 · Granted Jan 17, 2017

Estimated economic value: $8,675,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Polishing composition and method utilizing abrasive particles treated with an am2021
Composition containing heterocyclic compounds and a method of lubricating an int2021
Composition containing heterocyclic compounds and a method of lubricating an int2020
Polishing composition and method utilizing abrasive particles treated with an am2019
Method of polishing group III-V materials2019
Vertical bowl mill for producing coarse ground particles2018
Composition containing heterocyclic compounds and a method of lubricating an int2018
CMP method for suppression of titanium nitride and titanium/titanium nitride rem2017
Compositions and methods for selective polishing of silicon nitride materials2017
Polishing composition and method utilizing abrasive particles treated with an am2017
Composition for tungsten CMP2017
Compositions and methods for CMP of silicon oxide, silicon nitride, and polysili2016