Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Integrated circuits with resistor structures formed from gate metal and methods for fabricating same

Integrated circuits with resistor structures formed from gate metal and methods for fabricating same

US Patent 9530770 · Granted Dec 27, 2016

Estimated economic value: $8,113,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device including substrate layer with floating base region and gat2025
Semiconductor structure including a varactor and method for the formation thereo2021
Semiconductor structure including a varactor and method for the formation thereo2021
Fully depleted silicon on insulator (FDSOI) lateral double-diffused metal oxide 2019
Method of forming a semiconductor device2019
Semiconductor device structure2018
Semiconductor device and method2018
Semiconductor structure including a varactor2018
Semiconductor structure including a varactor2018
Semiconductor device comprising an e-fuse and a FET2016
E-fuse design for high-K metal-gate technology2016
Semiconductor device including a resistor and method for the formation thereof2016