Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Passivated III-V or Ge fin-shaped field effect transistor

Passivated III-V or Ge fin-shaped field effect transistor

US Patent 9425314 · Granted Aug 23, 2016

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Deposition of highly crystalline 2D materials2024
Perovskite oxides with a-axis orientation2022
Method for forming a qubit device2021
Si-based high-mobility CMOS device with stacked channel layers and resulting dev2020
Laser devices2020
Method for formation of a transition metal dichalcogenide (TMDC) material layer2019
Method for manufacturing a Si-based high-mobility CMOS device with stacked chann2019
Self-aligned nanostructures for semiconductor devices2018
Method of producing transition metal dichalcogenide layer2018
Method for manufacturing a Si-based high-mobility CMOS device with stacked chann2018
Gate-all-around semiconductor device and method of fabricating the same2017
Vertical nanowire semiconductor structures2016