Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming channel region dopant control in fin field effect transistor

Method of forming channel region dopant control in fin field effect transistor

US Patent 9379185 · Granted Jun 28, 2016

Estimated economic value: $5,648,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Substrate-less lateral diode integrated circuit structures2025
Integrated circuit structures having differentiated channel sizing2025
Dipole threshold voltage tuning for high voltage transistor stacks2025
Reference voltage adjustment per path for high speed memory signaling2025
Substrate-less silicon controlled rectifier (SCR) integrated circuit structures2025
Substrate-free integrated circuit structures2025
Heterogeneous integrated multi-chip cooler module2025
Duty cycle adjuster optimization training algorithm to minimize the jitter assoc2025
Apparatus, system and method to detect and improve an input clock performance of2025
Systems and methods for multi-modal user device authentication2025
Reference voltage training per path for high speed memory signaling2025
High performance interconnect2025