Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods for fabricatingintegrated circuits with spin torque transfer magnetic randomaccess memory (STT-MRAM) including a passivation layer formed along lateral sidewalls of a magnetic tunnel junction of the STT-MRAM

Methods for fabricatingintegrated circuits with spin torque transfer magnetic randomaccess memory (STT-MRAM) including a passivation layer formed along lateral sidewalls of a magnetic tunnel junction of the STT-MRAM

US Patent 9349772 · Granted May 24, 2016

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Face bonded semiconductor device with through oxide via and metal plug2025
Air gap with inverted T-shaped lower portion extending through at least one meta2025
Resistive random-access memory elements with lateral sidewall switching2025
Capacitor and airgap structure2025
Capacitor and airgap structure2025
Programmable interposer using RRAM platform2025
Programmable interposer using RRAM platform2025
Method of forming a sensor device having moisture sensitive dielectric layer wit2024
Semiconductor memory devices having an electrode with an extension2024
Metal-insulator-metal capacitor (MIMCAP) and methods of forming the same2024
Three electrode capacitor structure using spaced conductive pillars2024
SRAM bit cells with three-dimensional integration2024