Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of stressing a semiconductor layer

Method of stressing a semiconductor layer

US Patent 9318372 · Granted Apr 19, 2016

Estimated economic value: $2,622,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Planar cell nanoheater design and cell architecture for programmable phase chang2025
Template for growing a crystal of a two-dimensional material2025
Single-photon avalanche photodiode2025
Integrated circuit comprising a single photon avalanche diode and corresponding 2025
Chip containing an onboard non-volatile memory comprising a phase-change materia2025
Strained-channel fin FETs2025
Method to induce strain in finFET channels from an adjacent region2025
Method to induce strain in FINFET channels from an adjacent region2024
Integrated circuit comprising a single photon avalanche diode and corresponding 2024
Gate spacer patterning2023
Transistor comprising a channel placed under shear strain and fabrication proces2023
Chip containing an onboard non-volatile memory comprising a phase-change materia2023