Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming stacked trench contacts and structures formed thereby

Method of forming stacked trench contacts and structures formed thereby

US Patent 9293579 · Granted Mar 22, 2016

Estimated economic value: $9,243,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Integrated circuits with tungsten interconnect liners2025
Dielectric sidewall features for tuning thin film transistor (TFT) parasitics2025
Low defect, high mobility thin film transistors with in-situ doped metal oxide c2025
Multilevel wordline assembly for embedded DRAM2025
Capacitor connections in dielectric layers2025
Wrap-around trench contact structure and methods of fabrication2025
Gate-all-around integrated circuit structures having devices with channel-to-sub2025
Passivation layers for thin film transistors2025
Fabrication of gate-all-around integrated circuit structures having pre-spacer d2025
Integrated circuit structures having metal gates with tapered plugs2025
Decoupling capacitors and methods of fabrication2025
Gate-all-around integrated circuit structures having uniform threshold voltages 2025