Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for manufacturing a semiconductor device comprising transistors each having a different effective work function

Method for manufacturing a semiconductor device comprising transistors each having a different effective work function

US Patent 9287273 · Granted Mar 15, 2016

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor processing systems with in-situ electrical bias2024
Semiconductor processing system with in-situ electrical bias and methods thereof2023
Method for forming a film of an oxide of In, Ga, and Zn2023
Method for producing self-aligned gate and source/drain via connections for cont2022
Oxygen vacancy of amorphous indium gallium zinc oxide passivation by silicon ion2022
Semiconductor devices and methods of forming the same2022
Semiconductor processing system with in-situ electrical bias and methods thereof2022
Si-passivated GE gate stack2021
Method of forming gate of semiconductor device and semiconductor device having s2020
Method of forming gate of semiconductor device and semiconductor device having s2020
Method of forming gate of semiconductor device and semiconductor device having s2020
Method for forming source/drain contacts2020