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Home › FinFET with backgate, without punchthrough, and with reduced fin height variation

FinFET with backgate, without punchthrough, and with reduced fin height variation

US Patent 9236483 · Granted Jan 12, 2016

Estimated economic value: $9,932,000 ⓘ

Assignee

Qualcomm

Inventors

Bin Yang (191 patents)
Xia Li (322 patents)
PR Chidambaram (26 patents)
Choh Fei Yeap (90 patents)

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