Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Controlling the device performance by forming a stressed backside dielectric layer

Controlling the device performance by forming a stressed backside dielectric layer

US Patent 9236311 · Granted Jan 12, 2016

Estimated economic value: $4,247,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Package structure2025
Buffer design for package integration2025
Package2025
Molded dies in semiconductor packages and methods of forming same2025
Semiconductor packages including mixed bond types and methods of forming same2025
Semiconductor structure having photonic die and electronic die2025
Semiconductor device and method of manufacture2025
Semiconductor structure and manufacturing method thereof2025
Semiconductor package and method of manufacturing semiconductor package2025
Semiconductor package2025
Package, optical device, and manufacturing method of package2025
Package and method of fabricating the same2025