Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › III-N material grown on REN epitaxial buffer on Si substrate

III-N material grown on REN epitaxial buffer on Si substrate

US Patent 9236249 · Granted Jan 12, 2016

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Josephson junction using molecular beam epitaxy2025
Structure and method using a single crystalline bixbyite oxide layer in a orient2025
Structure and method using a single crystalline bixbyite oxide layer in a orient2025
Josephson Junction using molecular beam epitaxy2024
Electro-optic polymer devices having high performance claddings, and methods of 2024
Electronic device with 2-dimensional electron gas between polar-oriented rare-ea2023
Electronic device with 2-dimensional electron gas between polar-oriented rare-ea2023
Electronic device with 2-dimensional electron gas between polar-oriented rare-ea2023
Electro-optic polymer devices having high performance claddings, and methods of 2023
Localized strain fields in epitaxial layer over cREO2023
Low loss single crystal multilayer optical component and method of making same2023
Active region-less modulator and method2022