{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Memory device and method of controlling leakage current within such a memory device", "item": "https://www.patentleaderboard.com/patent/9147451"}]}

Home › Memory device and method of controlling leakage current within such a memory device

Memory device and method of controlling leakage current within such a memory device

US Patent 9147451 · Granted Sep 29, 2015

Estimated economic value: $10,833,000 ⓘ

Assignee

NVIDIA

Inventors

Yew Keong Chong (95 patents)
Sanjay Mangal (10 patents)
Hsin-Yu Chen (154 patents)

View full patent text on Google Patents →