Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Silicon single crystal doped with gallium, indium, or aluminum

Silicon single crystal doped with gallium, indium, or aluminum

US Patent 9051659 · Granted Jun 9, 2015

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Systems and methods for producing a single crystal silicon ingot using a vaporiz2025
Methods for producing a single crystal silicon ingot using boric acid as a dopan2025
Method of processing a cleaved semiconductor wafer2025
Systems and methods for controlling a gas dopant vaporization rate during a crys2025
Systems and methods for controlling a gas dopant vaporization rate during a crys2025
Ingot puller apparatus that use a solid-phase dopant2025
Methods for forming a unitized crucible assembly2024
Methods for forming a unitized crucible assembly2024
Crucible molds2024
Ingot puller apparatus having heat shields with feet having an apex2024
Cleaved semiconductor wafer imaging system2024
Cleaved semiconductor wafer camera system2024