Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for dual energy implantation for ultra-shallow junction formation of MOS devices

Method for dual energy implantation for ultra-shallow junction formation of MOS devices

US Patent 9024281 · Granted May 5, 2015

Estimated economic value: $204,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device2025
Semiconductor device and method of fabricating the same2025
Non-fullerene acceptor compound containing benzoselenadiazole and organic optoel2024
System and method of fileless malware detection and non-transitory computer read2024
MSECT-4 molecular sieves with off and ERI topologies, preparation method therefo2024
Semiconductor device and fabrication method thereof2024
Preparation method for accurate pattern of integrated circuit2023
Packet transmission method using proxy server and system thereof2023
Semiconductor device2023
Semiconductor devices and methods for fabricating the same2022
Conjugated polymer and application thereof2022
Semiconductor structure and method of forming the same2021