Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Free HCL used during pretreatment and AlGaN growth to control growth layer orientation and inclusions

Free HCL used during pretreatment and AlGaN growth to control growth layer orientation and inclusions

US Patent 9023673 · Granted May 5, 2015

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

HVPE apparatus and methods for growing indium nitride and indium nitride materia2023
HVPE apparatus and methods for growing indium nitride and indium nitride materia2023
HVPE apparatus and methods for growing indium nitride and indium nitride materia2023
Methods for producing composite GaN nanocolumns and light emitting structures ma2022
Methods for producing composite GaN nanocolumns and light emitting structures ma2022
Backflow reactor liner for protection of growth surfaces and for balancing flow 2017
Backflow reactor liner for protection of growth surfaces and for balancing flow 2017
Backflow reactor liner for protection of growth surfaces and for balancing flow 2017
Backflow reactor liner for protection of growth surfaces and for balancing flow 2017
Semi-polar III-nitride films and materials and method for making the same2016
Semi-polar III-nitride films and materials and method for making the same2016
Semi-polar III-nitride films and materials and method for making the same2016