Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › ZnTe on TiN or Pt electodes with a portion operable as a current limiting layer for ReRAM applications

ZnTe on TiN or Pt electodes with a portion operable as a current limiting layer for ReRAM applications

US Patent 8981335 · Granted Mar 17, 2015

Estimated economic value: $176,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Hybrid gate dielectrics for semiconductor power devices2019
Hybrid gate dielectrics for semiconductor power devices2018
Method for reducing forming voltage in resistive random access memory2017
TiOx based selector element2016
TiOx based selector element2016
Current selector for non-volatile memory in a cross bar array based on defect an2016
Current selector for non-volatile memory in a cross bar array based on defect an2016
Diamond like carbon (DLC) as a thermal sink in a selector stack for non-volatile2016
Reduction of forming voltage in semiconductor devices2016
Selector device using low leakage dielectric MIMCAP diode2016
Photo-induced MSM stack2016
Doped electrode for DRAM capacitor stack2016