Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Stress-engineered resistance-change memory device

Stress-engineered resistance-change memory device

US Patent 8841745 · Granted Sep 23, 2014

Estimated economic value: $1,743,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Data storage device with security module2023
Confirming a version of firmware loaded to a processor-based device2022
Randomizing firmware loaded to a processor memory2022
Current compliance layers and memory arrays comprising thereof2020
Camera system with multiple camera2020
Current compliance layers and memory arrays comprising thereof2020
Data storage system with pre-boot interface2019
Integrated circuit2018
Method for depositing a diffusion barrier layer and a metal conductive layer2018
Method for reducing forming voltage in resistive random access memory2017
Systems, methods and devices for control of the operation of data storage device2017
TiOx based selector element2016