Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy film

Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy film

US Patent 8830735 · Granted Sep 9, 2014

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor memory with adjustment circuit and method for controlling a semico2025
Magnetoresistive element and semiconductor device2025
Image processing device, imager, information processing device, detector, roadsi2025
Pseudo-static random-access memory and reading method thereof2025
Magnetoresistance effect element, storage element, and electronic device2024
Magnetic tunnel junction element and semiconductor device2024
Magnetic tunnel junction element and semiconductor device2024
Magnetic tunnel junction element and semiconductor device2024
Semiconductor memory device operates asynchronously with external clock signal2023
Memory system and operation method thereof2023
Semiconductor memory device to control operating timing based on temperature of 2022
Memory controller2022