Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods and structures for discharging plasma formed during the fabrication of semiconductor device

Methods and structures for discharging plasma formed during the fabrication of semiconductor device

US Patent 8749012 · Granted Jun 10, 2014

Estimated economic value: $2,106,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Three dimensional memory device and method of making thereof by forming channel 2025
Three-dimensional memory device and method of making thereof using double pitch 2025
Methods and apparatuses for forming semiconductor devices containing tungsten la2025
Three dimensional memory device and method of making thereof by forming channel 2024
Methods and apparatuses for forming semiconductor devices containing tungsten la2024
Three-dimensional memory device and method of making thereof using double pitch 2024
Three-dimensional memory device and method of making thereof using double pitch 2024
Cell, cell stack device, module, and module housing device2024
Fluorine-free tungsten deposition process employing in-situ oxidation and appara2022
Semiconductor device and method of fabricating the same2021
Three-dimensional memory device including electrically conductive layers with mo2021
Source down power FET with integrated temperature sensor2020