Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Thermalization of gaseous precursors in CVD reactors

Thermalization of gaseous precursors in CVD reactors

US Patent 8741385 · Granted Jun 3, 2014

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Engineered substrates, free-standing semiconductor microstructures, and related 2024
Semiconductor structures including bonding layers, multi-junction photovoltaic c2018
Semiconductor structures having active regions comprising InGaN and methods of f2018
Methods of fabricating semiconductor structures or devices using layers of semic2017
Methods of forming semiconductor structures including III-V semiconductor materi2017
Direct liquid injection for halide vapor phase epitaxy systems and methods2017
Semiconductor structures having active regions including indium gallium nitride,2017
Equipment for high volume manufacture of group III-V semiconductor materials2017
Equipment for high volume manufacture of group III-V semiconductor materials2017
Gallium trichloride injection scheme2016
Gallium trichloride injection scheme2016
Gas injectors including a funnel- or wedge-shaped channel for chemical vapor dep2016