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Home › Multi-semiconductor material vertical memory strings, strings of memory cells having individually biasable channel regions, memory arrays incorporating such strings, and methods of accesssing and forming the same

Multi-semiconductor material vertical memory strings, strings of memory cells having individually biasable channel regions, memory arrays incorporating such strings, and methods of accesssing and forming the same

US Patent 8687426 · Granted Apr 1, 2014

Estimated economic value: $8,870,000 ⓘ

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