Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › High density FET with integrated Schottky

High density FET with integrated Schottky

US Patent 8686493 · Granted Apr 1, 2014

Estimated economic value: $6,223,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Shielded gate trench power MOSFET with high-k shield dielectric2025
Systems and methods for designing a discrete device product2024
Systems and methods for designing a discrete device product2022
Trench MOSFET device and the preparation method thereof2020
Power device with high aspect ratio trench contacts and submicron pitches betwee2019
Trench MOSFET device and the preparation method thereof2018
Power device with high aspect ratio trench contacts and submicron pitches betwee2018
Split-gate trench power mosfet with protected shield oxide2018
Split-gate trench power MOSFET with protected shield oxide2017
Superjunction structures for power devices2017
Split-gate trench power MOSFET with protected shield oxide2016
Superjunction structures for power devices2015