Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same

Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same

US Patent 8637386 · Granted Jan 28, 2014

Estimated economic value: $26,959,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Diodes with schottky contact including localized surface regions2025
Techniques for fabricating charge balanced (CB) trench-metal-oxide-semiconductor2025
Neural network model for predicting usage in a hyper-converged infrastructure2024
Non-blocking backup in a log replay node for tertiary initialization2024
Vertical power transistor device2024
Extended cache for efficient object store access by a database2023
Superjunction power semiconductor devices formed via ion implantation channeling2023
Systems and methods for junction termination of wide band gap super-junction pow2023
System and method for scaling resources of a secondary network for disaster reco2023
Defect engineered high quality multilayer epitaxial graphene growth with thickne2023
System and method for automatically generating neural networks for anomaly detec2023
Cloud restart for VM failover and capacity management2023