Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for modeling and parameter extraction of LDMOS devices

Method for modeling and parameter extraction of LDMOS devices

US Patent 8608376 · Granted Dec 17, 2013

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Intelligent multi-level voltage gate driving system for semiconductor power devi2023
High temperature optoelectronic devices for power electronics2022
Intelligent multi-level voltage gate driving system for semiconductor power devi2022
Micro-hall effect devices for simultaneous current and temperature measurements 2021
Method and assembly for mitigating short channel effects in silicon carbide MOSF2020
Circuit and method for fault detection and reconfiguration in cascaded H-bridge 2020
Flip-chip wire bondless power device2020
Low capacitance surge suppression device2019
Method and system for a semiconductor device with integrated transient voltage s2019
Method and system for transient voltage suppression devices with active control2018
Transient voltage suppression devices with symmetric breakdown characteristics2018
Semiconductor assembly and method of manufacture2018