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Home › Method of forming fully silicided NMOS and PMOS semiconductor devices having independent polysilicon gate thicknesses, and related device

Method of forming fully silicided NMOS and PMOS semiconductor devices having independent polysilicon gate thicknesses, and related device

US Patent 8574980 · Granted Nov 5, 2013

Estimated economic value: $9,557,000 ⓘ

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