Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for growing p-type SiC semiconductor single crystal and p-type SiC semiconductor single crystal

Method for growing p-type SiC semiconductor single crystal and p-type SiC semiconductor single crystal

US Patent 8470698 · Granted Jun 25, 2013

Estimated economic value: $1,553,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Current detection device2023
Semiconductor device2023
Stack comprising single-crystal diamond substrate2022
Semiconductor device2022
Apparatus for producing a single crystal of a metal oxide comprising a Pt-Rh all2019
Process for purifying phosphorus pentafluoride2018
Production method of SiC crystal2018
Method for producing SiC single crystal substrate in which a Cr surface impurity2018
Method of production of sic single crystal2017
Gettering process for producing semiconductor device2016
PWM signal generation circuit and processor system2016
Production method of n-type SiC single crystal, n-type SiC single crystal obtain2015