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Home › Multi-semiconductor material vertical memory strings, strings of memory cells having individually biasable channel regions, memory arrays incorporating such strings, and methods of accessing and forming the same

Multi-semiconductor material vertical memory strings, strings of memory cells having individually biasable channel regions, memory arrays incorporating such strings, and methods of accessing and forming the same

US Patent 8395941 · Granted Mar 12, 2013

Estimated economic value: $2,780,000 ⓘ

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