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Home › Structure and method for forming a light detecting diode and a light emitting diode on a silicon-on-insulator wafer backside

Structure and method for forming a light detecting diode and a light emitting diode on a silicon-on-insulator wafer backside

US Patent 8354678 · Granted Jan 15, 2013

Estimated economic value: $8,874,000 ⓘ

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