Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Silicon carbide semiconductor device with Schottky barrier diode and method of manufacturing the same

Silicon carbide semiconductor device with Schottky barrier diode and method of manufacturing the same

US Patent 8324704 · Granted Dec 4, 2012

Estimated economic value: $982,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Ion detector, measurement device, and mass spectrometer2025
Switching element2025
Exhaust gas cleaning catalyst structure and production method therefor2025
Semiconductor device and method of manufacturing the same2025
Semiconductor device and manufacturing method of semiconductor device2025
Semiconductor device with surface and deep guard rings2025
Beamform processing for sonic imaging using monopole and dipole sources2024
Object recognition device2024
Ion detector2024
Three-level power converter and method of controlling intermediate potential of 2024
Inkjet printing method and inkjet printing device2024
Work flow based acoustic processing system and method2023