Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of manufacturing hafnium-containing and silicon-containing metal oxynitride dielectric film

Method of manufacturing hafnium-containing and silicon-containing metal oxynitride dielectric film

US Patent 8288234 · Granted Oct 16, 2012

Estimated economic value: $74,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Display device and electronic device2025
Image forming apparatus that sets cooling time of a fixing device2025
Processing method, method of manufacturing semiconductor device, processing appa2025
Method of processing substrate, method of manufacturing semiconductor device, re2025
Processing method, method of manufacturing semiconductor device, processing appa2025
Memory system2025
Related information providing method for image processing, image processing syst2025
Method of processing substrate and method of manufacturing semiconductor device 2025
Memory system2025
Wafer processing method2025
Imaging device and electronic device2025
Display device and electronic device2025