{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Method of forming a high capacitance diode", "item": "https://www.patentleaderboard.com/patent/8222115"}]}
Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming a high capacitance diode

Method of forming a high capacitance diode

US Patent 8222115 · Granted Jul 17, 2012

Estimated economic value: $4,569,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method and apparatus for plasma dicing a semi-conductor wafer2025
Shielded gate trench power MOSFET with high-k shield dielectric2025
Fan-out wafer level packaging of semiconductor devices2025
Method of separating electronic devices having a back layer and apparatus2025
Monolithic semiconductor device assemblies2024
Semiconductor devices with dissimlar materials and methods2024
Method of reducing residual contamination in singulated semiconductor die2024
Structures and methods for source-down vertical semiconductor device2024
Process of forming an electronic device including a polymer support layer2024
Semiconductor device and method for supporting ultra-thin semiconductor die2024
Semiconductor devices with dissimlar materials and methods2023
Method of reducing residual contamination in singulated semiconductor die2023