Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of fabricating an epitaxially grown layer

Method of fabricating an epitaxially grown layer

US Patent 8216368 · Granted Jul 10, 2012

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Pseudo-substrate with improved efficiency of usage of single crystal material2024
Optical article having directional micro- or nanostructured thin film coating, a2024
Pseudo-substrate with improved efficiency of usage of single crystal material2021
Integrated circuit formed from a stack of two series-connected chips2020
Item coated with a silicon/organic layer improving the performances of an outer 2019
Fabrication of substrates with a useful layer of monocrystalline semiconductor m2018
Method of fabricating a composite structure with a stable bonding layer of oxide2016
Relaxation and transfer of strained material layers2015
Relaxation and transfer of strained material layers2015
Method for making a composite substrate and composite substrate according to the2015
Substrate cutting device and method2015
Process for fabricating a semiconductor structure employing a temporary bond2015