Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device having metal contacts formed in an interlayer dielectric film comprising four silicon-containing layers

Semiconductor device having metal contacts formed in an interlayer dielectric film comprising four silicon-containing layers

US Patent 8203210 · Granted Jun 19, 2012

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Stacked filter package having multiple types of acoustic wave devices2025
Method of manufacturing a self-shielded acoustic wave device package2025
Method of making stacked acoustic wave resonator package with laser-drilled vias2025
Methods of plasma dicing bulk acoustic wave components2024
Seat structure2024
Semiconductor device2024
Bulk acoustic wave component with conductor extending laterally from via2023
Vehicle2023
Devices and methods related to nested filters2023
Electroless Co—W plating film2023
Seat adjustment device2023
Stacked temperature compensated acoustic wave device with high thermal conductiv2023