Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming a high capacitance diode and structure therefor

Method of forming a high capacitance diode and structure therefor

US Patent 8143701 · Granted Mar 27, 2012

Estimated economic value: $9,129,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method and apparatus for plasma dicing a semi-conductor wafer2025
Shielded gate trench power MOSFET with high-k shield dielectric2025
Fan-out wafer level packaging of semiconductor devices2025
Method of separating electronic devices having a back layer and apparatus2025
Monolithic semiconductor device assemblies2024
Semiconductor devices with dissimlar materials and methods2024
Method of reducing residual contamination in singulated semiconductor die2024
Structures and methods for source-down vertical semiconductor device2024
Process of forming an electronic device including a polymer support layer2024
Semiconductor device and method for supporting ultra-thin semiconductor die2024
Semiconductor devices with dissimlar materials and methods2023
Method of reducing residual contamination in singulated semiconductor die2023